5/30/2023 0 Comments Thin film transistor![]() We propose here a new approach for validating to what extent a chosen transistor model is able to predict correctly the transistor operation. However, the accuracy of the extracted parameters is quite limited, because their values depend on the extraction technique and on the validity of the underlying transistor model. The thin-film transistor (TFT) is a popular tool for determining the charge-carrier mobility in semiconductors, as the mobility (and other transistor parameters, such as the contact resistances) can be conveniently extracted from its measured current-voltage characteristics. The overall study provides a deeper understanding of microstructural and molecular growth of DFH-4T film and clarify the structural effects on charge transport and injection for implementation of high-mobility top-contact transistors. Moreover, the capacitance-voltage measurements of DFH-4T metal-insulator-semiconductor diodes demonstrate a morphological dependence of charge injection from top contacts, which well explains the variation of threshold voltage with thickness. Further analyses of low-temperature transport measurements with mobility-edge model demonstrate that the electronic states of DFH-4T transistors are mainly determined by the film continuity and crystallinity of the bottom multilayered terrace. Yet the crystallite structure and the orientation of molecular constituent, as determined by X-ray diffraction and near-edge X-ray absorption fine structure respectively, do not differ much with respect to film thickness increase. The morphology of thin films revealed by atomic force microscopy shows a dramatic change from multilayered terrace to stacked rod like structures as the film thickness is increased. s−1, while the threshold voltage shows a different trend of first decrease then increase.When the DFH-4T thickness increases from 8 nm to 80 nm, the room-temperature field-effect mobility increases monotonically from 0.01 to 1 cm2 This paper presents a systematic study of the relationship between DFH-4T transistor performance and film structure properties as controlled by deposited thickness. Α,ω-diperfluorohexylquaterthiophene (DFH-4T) has been an attractive n-type material employed in the development of high-mobility organic field-effect transistors. The proposed method, based on the aggregation and subsequent growth of polycrystalline and single crystal-grains, leading to enhanced crystallization, has potential to be applicable in thin film processing industry for their wide applications. Ultrashort laser induced crystallinity greatly enhances the electrical properties Hall measurements reinforced that the overall carrier concentration increases after scanning at different laser fluences. No melting was evident, although a change in the close packing, shape and size of nanoscale polycrystalline grains is observed. ![]() XRD confirms the enlargement of the single crystal grain size. ![]() Atomic force microscopy surface morphology and x-ray diffraction (XRD) analysis reveal significant improvements in the average polycrystalline grain size after laser annealing the sheet resistance was reduced by 19% of the initial value measured by a Four-point probe system. ![]() The approach allows better control of the grain size by changing the applied laser fluence. A systematic investigation of laser induced annealing from single pulse to high pulse overlapping is reported upon scanning at fluences lower than the threshold required for the damage/ablation of molybdenum thin films. We report a novel solid-state crystallization process for annealing of high melting point molybdenum thin films. Trading such disparities in thermal properties between a thin film and its substrate can significantly impede material processing. It is challenging to crystalize a thin film of higher melting temperature when deposited on a substrate with comparatively lower melting point. ![]()
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